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  36. 7 Nov 2016 13001S8D Datasheet - NPN Transistor - JTD Semi, 13001 datasheet, 13001S8D pdf, 13001S8D pinout, 13001S8D manual, 13001S8D schematic, 13001S8D equivalent.
  37. Electronics Tutorial about the PNP Transistor, the PNP Transistor as a switch , how the PNP Transistor works including its Common Emitter Configuration. 2SC2001 tranzystor datasheet, data sheet, NPN SILICON TRANSISTOR. Nuance pdf converter pro download. , datasheet, 2SC2001 data sheet, NEC, 2SC2001 pdf, pdf
  38. Read Online >> Read Online 13001 npn pdf printer 13001 Datasheet(PDF) 1 Page 13001. NPN Silicon Epitaxial Planar Transistor. Follow these steps in Adobe Acrobat to use the Print command with the Adobe PDF printer to convert your file to PDF. How to Add an Adobe PDF Printer eHowTech. Loading How to install pdf
  39. Symbol. Parameter. Test Condition. Min. Typ. Max. Units. BVCBO. Collector-Base Breakdown Voltage. IC=100µA, IE=0. 400. V. BVCEO. Collector-Emitter Breakdown Voltage. IC=5mA, IB=0. 400. V. BVEBO. Emitter-Base Breakdown Voltage. IE=100µA, IC=0. 7. V. ICBO. Collector Cut-off Current. VCB=200V, IE=0. 0.1. µA.
  40. Switch-mode NPN Bipolar. Power Transistor. For Switching Power Supply Applications. The MJE13007 is designed for high?voltage, high?speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch?mode applications such as Switching. Regulators, Inverters, Motor
  41. MJE13001. NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 www.unisonic.com.tw. QW-R201-055.I. ? ABSOLUTE MAXIMUM RATINGS. PARAMETER. SYMBOL. RATINGS. UNIT. Collector-Emitter Voltage. VCEO. 400. V. Collector-Base Voltage. VCBO. 600. V. Emitter Base Voltage. VEBO. 7. V.
  42. Preferred Device. SWITCHMODEt Series. NPN Silicon Power. Transistors. The MJE13009 is designed for high?voltage, high?speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,.
  43. Symbol. Parameter. Test Condition. Min. Typ. Max. Units. BVCBO. Collector-Base Breakdown Voltage. IC=100µA, IE=0. 400. V. BVCEO. Collector-Emitter Breakdown Voltage. IC=5mA, IB=0. 400. V. BVEBO. Emitter-Base Breakdown Voltage. IE=100µA, IC=0. 7. V. ICBO. Collector Cut-off Current. VCB=200V, IE=0. 0.1. µA.
  44. Pobierz dokumentacje MJE13001 Datasheet - NPN SILICON POWER TRANSISTOR. SI SEMICONDUCTORS MJE13001 Datasheet PDF.
  45. Sp13001 datasheet pdf high voltage fast switching npn power high gain two transistor voltage amplifier high voltage transistor. Sp13001 datasheet pdf high voltage fast switching npn power high gain two transistor voltage amplifier high voltage transistor transistor.
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