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GaN metal–oxide–semiconductor (MOS) capacitors were fabricated by using Ga oxide formed by photoelectrochemical oxidation of GaN. . E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), Chap. 8.
12 Jul 2017 Condensed Matter > Mesoscale and Nanoscale Physics. Title: Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient We find that the split accumulation gate structure creates silicon
Journal of Applied Physics the interface properties of metal?oxide?semiconductor (MOS) structures formed by S. M. Sze, Physics of Semiconductors, 2nd ed.
Applied Physics Letters We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al 2 O 3
H. Bentarzi, Transport in Metal-Oxide-Semiconductor Structures,. Engineering Materials . bias applied to the gate, holes are attracted by the negative charges to form an .. Nicollian, E.H., Brews, J.R.: MOS Physics and Technology. Wiley
Department of Physics, University of California, San Diego, La Jolla, California 92093 dielectric function of gate insulators in metal-oxide-semiconductor structures using infrared and drain gold contacts form a grid on the insulating layer.
E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), pp. 668 and 711. 2. B. Nielsen, K. G. Lynn,
Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation. Tsunenobu . E. H. Nicollian and J. R. Brews 1982 MOS Physics and Technology (John Wiley & Sons, New York). [16].
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